|
Form
Factor
|
M.2
|
|
Capacity
|
250GB,
500GB, 1TB, 2TB
|
General Feature
|
|
Application
|
Client PCs
|
FORM FACTOR
|
M.2 (2280)
|
INTERFACE
|
PCIe® Gen
4.0 x4, NVMe™ 1.3c
|
DIMENSION (WxHxD)
|
80.15 x 22.15 x 2.38 (mm)
|
WEIGHT
|
Max 9.0 g
|
STORAGE MEMORY
|
Samsung V-NAND 3-bit MLC
|
CONTROLLER
|
Samsung In-house Controller
|
CACHE MEMORY
|
Samsung 512MB Low Power DDR4 SDRAM
(250/500GB)
Samsung 1GB Low Power DDR4 SDRAM (1TB)
Samsung 2GB Low Power DDR4 SDRAM (2TB)
|
Special Feature
|
|
TRIM Support
|
Supported
|
S.M.A.R.T Support
|
Supported
|
GC (GARBAGE COLLECTION)
|
Auto Garbage Collection Algorithm
|
ENCRYPTION SUPPORT
|
AES 256-bit Encryption (Class 0), TCG/Opal,
IEEE1667 (Encrypted drive)
|
WWN SUPPORT
|
Not Supported
|
DEVICE SLEEP MODE SUPPORT
|
Yes
|
Performance
|
|
SEQUENTIAL READ
|
250GB: Up to 6,400 MB/s
500GB: Up to 6,900 MB/s
1TB: Up to 7,000 MB/s
2TB: Up to 7,000 MB/s
|
SEQUENTIAL WRITE
|
250GB: Up to 2,700 MB/s
500GB: Up to 5,000 MB/s
1TB: Up to 5,000 MB/s
2TB: Up to 5,100 MB/s
|
RANDOM READ (4KB, QD32)
|
250GB: Up to 500,000 IOPS
500GB: Up to 800,000 IOPS
1TB: Up to 1,000,000 IOPS
2TB: Up to 1,000,000 IOPS
|
RANDOM WRITE (4KB, QD32)
|
250GB: Up to 600,000 IOPS
500GB: Up to 1,000,000 IOPS
1TB: Up to 1,000,000 IOPS
2TB: Up to 1,000,000 IOPS
|
RANDOM READ (4KB, QD1)
|
250GB: Up to 22,000 IOPS
500GB: Up to 22,000 IOPS
1TB: Up to 22,000 IOPS
2TB: Up to 22,000 IOPS
|
RANDOM WRITE (4KB, QD1)
|
250GB: Up to 60,000 IOPS
500GB: Up to 60,000 IOPS
1TB: Up to 60,000 IOPS
2TB: Up to 60,000 IOPS
|
Environment
|
|
AVERAGE POWER CONSUMPTION
(System Level)3)
|
250GB: Average 5 W Maximum 7 W
512GB: Average 5.9 W Maximum 7.4 W
1TB: Average 6.2 W Maximum 8.9 W
2TB: Average 6.1 W Maximum 7.2 W
(Burst mode)
|
POWER CONSUMPTION (IDLE)3)
|
Max. 35 mW
|
POWER CONSUMPTION (DEVICE
SLEEP)
|
Max. 5 mW
|
ALLOWABLE VOLTAGE
|
3.3 V ± 5 % Allowable voltage
|
RELIABILITY (MTBF)
|
1.5 Million Hours Reliability
|
OPERATING TEMPERATURE
|
0 - 70 ℃
|
Shock
|
1,500 G & 0.5 ms (Half sine)
|
