|
Form
Factor
|
2.5-inch
|
|
Capacity
|
250GB,
500GB, 1TB, 2TB, 4TB
|
|
Sequential
Read Speed
|
Up
to 560 MB/s
|
|
Sequential
Write Speed
|
Up
to 530 MB/s
|
General Feature
|
|
Application
|
Client PCs
|
FORM FACTOR
|
2.5 inch
|
INTERFACE
|
SATA 6 Gb/s Interface,
compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface
|
DIMENSION (WxHxD)
|
100 X 69.85 X 6.8 (mm)
|
WEIGHT
|
250GB: Apporx. 45.0g
500GB: Apporx. 45.0g
1TB: Apporx. 45.0g
2TB: Apporx. 46.0g
4TB: Apporx. 48.0g
|
STORAGE MEMORY
|
Samsung V-NAND 3bit MLC
|
CONTROLLER
|
Samsung MKX Controller
|
CACHE MEMORY
|
Samsung 512 MB Low Power DDR4 SDRAM (250GB)
Samsung 512 MB Low Power DDR4 SDRAM (500GB)
Samsung 1 GB Low Power DDR4 SDRAM (1,000GB)
Samsung 2 GB Low Power DDR4 SDRAM (2,000GB)
Samsung 4 GB Low Power DDR4 SDRAM (4,000GB)
|
Special Feature
|
|
TRIM Support
|
Yes
|
S.M.A.R.T Support
|
Yes
|
GC (GARBAGE COLLECTION)
|
Auto Garbage Collection Algorithm
|
ENCRYPTION SUPPORT
|
AES 256-bit Encryption (Class 0), TCG/Opal,
IEEE1667 (Encrypted drive)
|
WWN SUPPORT
|
World Wide Name supported
|
DEVICE SLEEP MODE SUPPORT
|
Yes
|
Performance
|
|
SEQUENTIAL READ3)
|
Up to 560 MB/s
|
SEQUENTIAL WRITE3) 4)
|
Up to 530 MB/s
|
RANDOM READ (4KB, QD32)3) 4)
|
Up to 98,000 IOPS
|
RANDOM WRITE (4KB, QD32)3) 4)
|
Up to 88,000 IOPS
|
RANDOM READ (4KB, QD1)3) 4)
|
Up to 13,000 IOPS
|
RANDOM WRITE (4KB, QD1)3) 4)
|
Up to 36,000 IOPS
|
Environment
|
|
AVERAGE POWER CONSUMPTION
(System Level)5) 6)
|
250GB: Average: 2.2 W Maximum: 3.5 W (Burst
mode)
500GB: Average: 2.2 W Maximum: 3.5 W (Burst mode)
1,000GB: Average: 2.5 W Maximum: 4.0 W (Burst mode)
2,000GB: Average: 2.5 W Maximum: 4.5 W (Burst mode)
4,000GB: Average: 2.5 W Maximum: 5.0 W (Burst mode)
|
POWER CONSUMPTION (IDLE)5) 6)
|
250GB: Max. 30 mW
500GB: Max. 30 mW
1TB: Max. 30 mW
2TB: Max. 35 mW
4TB: Max. 35 mW
|
ALLOWABLE VOLTAGE
|
5V ± 5% Allowable voltage
|
RELIABILITY (MTBF)
|
1.5 Million Hours Reliability
|
OPERATING TEMPERATURE
|
0 - 70 ℃
|
Shock
|
1,500 G & 0.5 ms (Half sine)
|
