|
Form
Factor
|
M.2
|
|
Capacity
|
250GB, 500GB, 1TB
|
|
Sequential
Read Speed
|
Up to 3,500 MB/s
|
|
Sequential
Write Speed
|
Up to 3,000 MB/s
|
|
General
Feature
|
|
Application
|
Client PCs
|
FORM
FACTOR
|
M.2 (2280)
|
INTERFACE
|
PCIe® Gen
3.0 x4, NVMe™ 1.4
|
DIMENSION
(WxHxD)
|
80.15 x 22.15 x 2.38 (mm)
|
WEIGHT
|
Max 8.0 g
|
STORAGE
MEMORY
|
Samsung V-NAND 3-bit MLC
|
CONTROLLER
|
Samsung In-House Controller
|
CACHE
MEMORY
|
HMB(Host Memory Buffer)
|
Special Feature
|
|
TRIM
Support
|
Supported
|
S.M.A.R.T
Support
|
Supported
|
GC
(GARBAGE COLLECTION)
|
Auto Garbage Collection Algorithm
|
ENCRYPTION
SUPPORT
|
AES 256-bit Encryption (Class 0)
TCG/Opal IEEE1667 (Encrypted drive)
|
WWN
SUPPORT
|
Not Supported
|
DEVICE
SLEEP MODE SUPPORT
|
Yes
|
Performance
|
|
SEQUENTIAL
READ
|
250GB: Up to 2,900 MB/s
500GB: Up to 3,100 MB/s
1TB: Up to 3,500 MB/s
|
SEQUENTIAL
WRITE
|
250GB: Up to 1,300 MB/s
500GB: Up to 2,600 MB/s
1TB: Up to 3,000 MB/s
|
RANDOM
READ (4KB, QD32)
|
250GB: Up to 230,000 IOPS
500GB: Up to 400,000 IOPS
1TB: Up to 500,000 IOPS
|
RANDOM
WRITE (4KB, QD32)
|
250GB: Up to 320,000 IOPS
500GB: Up to 470,000 IOPS
1TB: Up to 480,000 IOPS
|
RANDOM
READ (4KB, QD1)
|
250GB: Up to 17,000 IOPS
500GB: Up to 17,000 IOPS
1TB: Up to 17,000 IOPS
|
RANDOM
WRITE (4KB, QD1)
|
250GB: Up to 53,000 IOPS
500GB: Up to 54,000 IOPS
1TB: Up to 54,000 IOPS
|
Environment
|
|
AVERAGE
POWER CONSUMPTION (System Level)3)
|
250GB: Average 3.7 W Maximum 5.6 W (Burst
mode)
500GB: Average 4.3 W Maximum 5.9 W (Burst mode)
1TB: Average 4.6 W Maximum 5.3 W (Burst mode)
|
POWER
CONSUMPTION (IDLE)3)
|
Max. 45 mW
|
POWER
CONSUMPTION (DEVICE SLEEP)
|
Max. 5 mW
|
ALLOWABLE
VOLTAGE
|
3.3 V ± 5 % Allowable voltage
|
RELIABILITY
(MTBF)
|
1.5 Million Hours Reliability
|
OPERATING
TEMPERATURE
|
0 - 70 ℃
|
Shock
|
1,500 G & 0.5 ms (Half sine)
|
